Growth and isolation of large area boron-doped nanocrystalline diamond sheets: a route toward diamond-on-graphene heterojunction

Robert Bogdanowicz , M. Ficek , Michał Sobaszek , A. Nosek , Ł. Gołuński , Jakub Karczewski , A. Jaramillo-Botero , William A. Goddard III , M. Bockrath , Tadeusz Ossowski


Many material device applications would benefit from thin diamond coatings, but current growth techniques, such as chemical vapor deposition (CVD) or atomic layer deposition require high substrate and gas-phase temperatures that would destroy the device being coated. The development of freestanding, thin boron-doped diamond nanosheets grown on tantalum foil substrates via microwave plasma-assisted CVD is reported. These diamond sheets (measuring up to 4 × 5 mm in planar area, and 300–600 nm in thickness) are removed from the substrate using mechanical exfoliation and then transferred to other substrates, including Si/SiO2 and graphene. The electronic properties of the resulting diamond nanosheets and their dependence on the free-standing growth, the mechanical exfoliation and transfer processes, and ultimately on their composition are characterized. To validate this, a prototypical diamond nanosheet–graphene field effect transistor-like (DNGfet) device is developed and its electronic transport properties are studied as a function of temperature. The resulting DNGfet device exhibits thermally activated transport (thermionic conductance) above 50 K. Below 50 K a transition to variable range hopping is observed. These findings demonstrate the first step towards a low-temperature diamond-based transistor.
Author Robert Bogdanowicz
Robert Bogdanowicz,,
, M. Ficek
M. Ficek,,
, Michał Sobaszek
Michał Sobaszek,,
, A. Nosek
A. Nosek,,
, Ł. Gołuński
Ł. Gołuński,,
, Jakub Karczewski
Jakub Karczewski,,
, A. Jaramillo-Botero
A. Jaramillo-Botero,,
, William A. Goddard III
William A. Goddard III,,
, M. Bockrath
M. Bockrath,,
, Tadeusz Ossowski (FCh / DACh / LSCh)
Tadeusz Ossowski,,
- Laboratory of Supramolecular Chemistry
Journal seriesAdvanced Functional Materials, ISSN 1616-301X, (N/A 200 pkt)
Issue year2019
ASJC Classification1603 Electrochemistry; 3104 Condensed Matter Physics; 2502 Biomaterials; 2504 Electronic, Optical and Magnetic Materials
Languageen angielski
Score (nominal)200
Score sourcejournalList
ScoreMinisterial score = 200.0, 28-01-2020, ArticleFromJournal
Publication indicators WoS Citations = 1; Scopus SNIP (Source Normalised Impact per Paper): 2018 = 2.347; WoS Impact Factor: 2018 = 15.621 (2) - 2018=14.755 (5)
Citation count*2 (2020-03-24)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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